The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1992
Filed:
Oct. 10, 1991
Applicant:
Inventor:
J Eric Ruetz, San Bruno, CA (US);
Assignee:
Samsung Semiconductor, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03L / ;
U.S. Cl.
CPC ...
363 60 ; 331 / ; 331 17 ; 331 25 ; 328155 ; 307511 ;
Abstract
A charge pump having gate control voltages multiplexed to gates of FET driver circuits to precisely control charge injected by the charge pump to a low pass filter network. Large capacitors between the supply voltages and the respective gate control voltage derived from the particular supply voltage provide greater noise immunity which further reduces phase errors introduced by injected charge variations. The large capacitors help to hold the gate voltages constant, further controlling the injected charge.