Conductance modulated integrated transistor structure with low drain

Abstract

Disclosed is an integrated transistor structure having increased conductance and operating speed including a complementary insulated gate field-effect transistor pair, each transistor including a source region and a drain region with a gate contact positioned over a channel region therebetween, an ohmic contact to the source regions, and a Schottky contact or PN rectifying junction to each of the drain regions. The dopant concentration of the drain regions is sufficiently low to prevent the Schottky contacts from forming ohmic contacts with the drain regions. The gates of the two transistors are interconnected and function as the input terminal, and the two Schottky contacts are interconnected as the output of the device. The operation of the device is such that the lightly doped drain regions act as bases of bipolar transistors, with the emitters formed by the Schottky and PN diodes. Majority carriers injected by the Schottky diodes modulate the channel regions, thereby lowering their resistivity and increasing the transconductance of the device without increasing the physical size or the capacitance of the device and thereby improving the speed of the device. Speed of operation in enhanced by providing dielectric material between the drain regions and the substrate.