The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1992
Filed:
Jan. 30, 1992
Noriyuki Homma, Kodaira, JP;
Hiroaki Nambu, Hachioji, JP;
Kunihiko Yamaguchi, Sayama, JP;
Tohru Nakamura, Tanashi, JP;
Youji Idei, Asaka, JP;
Kazuo Kanetani, Kokubunji, JP;
Kenichi Ohhata, Kokubunji, JP;
Yoshiaki Sakurai, Kokubunji, JP;
Hisayuki Higuchi, Kokubunji, JP;
Hitachi, Ltd., Tokyo, JP;
Hitachi Device Engineering Co., Ltd., Mobara, JP;
Abstract
The disclosure includes feeding a current I.sub.R to only BIT lines selected, or feeding current I.sub.R transiently to only the BIT lines switched from unselected to selected states; and a sense amplifier for detecting the difference between the currents flowing in selected BIT lines to read out stored information, wherein current I.sub.R and cell current I.sub.cell have a relation of I.sub.R >I.sub.cell. The BiC MOS memory has high speed, low power and high integration density. Diodes are provided between the memory cell and the BIT lines.