The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1992
Filed:
Jan. 03, 1992
Applicant:
Inventor:
Takatoshi Nagoya, Annaka, JP;
Assignee:
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437-8 ; 437225 ; 356400 ; 356401 ;
Abstract
A method capable of measuring pattern shift of a semiconductor wafer in a short period of time with utmost ease and in an inexpensive manner is disclosed, wherein a main scale pattern and a vernier scale pattern are formed in parallel spaced confrontation on the semiconductor wafer, then one of the main scale pattern and the vernier scale pattern is covered with an oxide film layer, subsequently an epitaxial growing process is performed to form an epitaxial layer over the semiconductor wafer, and after that the dispalcement between the main scale pattern and the vernier scale pattern is measured.