The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1992
Filed:
Oct. 09, 1991
Ricardo I Fuentes, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for radiation hardening by means of a suitable thermal treatment of the membrane material, which in the preferred embodiment is silicon carbide (SiC). The method includes steps of thermally treating a freestanding SiC film (drumlike membrane with a silicon frame) or an unetched film (attached to the silicon wafer throughout its entire area), in an inert atmosphere or vacuum. The temperature for the treatment may range from a couple hundred degrees Celsius to one above the growth temperature. The treatment time, depending on the anneal temperature, can be as short as few minutes or as long as a couple of hours. Optimal anneal times and temperatures will depend on the material and the degree of radiation hardening required. Significant hardening may be achieved even at the lowest temperature.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile