The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 1992
Filed:
Apr. 01, 1992
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method for fabricating a sub-micron geometry semiconductor device using a chromeless mask. An optical exposure system (22) directs light through a chromeless mask (21). The chromeless mask (21) uses destructive interference of light to pattern a light sensitive material (32) on a semiconductor wafer (28). Phase differences in light passing thru chromeless mask (21) creates dark regions which form a non-exposed area of light sensitive material (37). The exposed light sensitive material is removed. The non-exposed area of light sensitive material (37) which remains, protects the gate material underneath it, as all other gate material is removed from the wafer. The non-exposed area of light sensitive material (37) is removed leaving a sub-micron gate (39). A drain and source is then formed to complete the device.