The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 1992
Filed:
Jun. 29, 1990
Applicant:
Inventors:
Kenji Shimoyama, Ushiku, JP;
Hideki Gotoh, Ushiku, JP;
Assignee:
Mitsubishi Kasei Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437129 ; 437133 ; 148D / ;
Abstract
Carrier injection layers are formed on an Al.sub.x Ga.sub.1-x As clad layer of high resistance by embedding and re-growth with the use of crystal growth processes such as MO-VPE or MO-MBE where material supply sources are all provided by gas sources, whereby it is not required to mesa-etch embedding regions to a depth reaching a substrate. The formation of any separate blocking layer is dispensed with, any possible influence of the substrate is elminated, and the time constant is decreased by decreasing the inter-electrode capacity.