The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1992
Filed:
Apr. 02, 1990
Mamoru Tomozane, Scottsdale, AZ (US);
H Ming Liaw, Scottsdale, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A thick buried insulating layer is formed by employing a multiple semiconductor layer growth/implant/anneal cycle. A first buried insulating layer is formed in a semiconductor substrate by implanting a dopant which reacts with the substrate to form an insulating layer and then annealing the substrate. Subsequently, a thin semiconductor layer is grown on the surface of the substrate. This is followed by a second implantation of the dopant which reacts with the substrate to form an insulating layer and an anneal to form a second buried insulating layer. The two buried insulating layers may be continuous to form a single, thick buried insulating layer or may be discontinuous to form two buried insulating layers separated by a semiconductor layer. The cycle may be repeated until a desirable thickness of the buried insulating layer is achieved or until a desirable number of buried insulating layers are formed.