The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 1992
Filed:
Jul. 01, 1991
Applicant:
Inventors:
X Theodore Zhu, Chandler, AZ (US);
Jonathan K Abrokwah, Tempe, AZ (US);
Herbert Goronkin, Tempe, AZ (US);
William J Ooms, Chandler, AZ (US);
Carl L Shurboff, Gilbert, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 42 ; 357 15 ; 357 16 ; 357 22 ; 357 46 ;
Abstract
A heterojunction field effect transistor structure having a plurality of vertically stacked field effect devices. Two or more devices having electrically independent source and drain regions are formed such that a single gate electrode controls current flow in each of the devices. Each of the vertically stacked FETs have electrically isolated channel regions which may be controlled by a single gate electrode. Vertically stacked devices provide greater device packing density.