The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1992
Filed:
Nov. 17, 1989
Fred T Cheng, Cupertino, CA (US);
Samsung Semiconductor, Inc., San Jose, CA (US);
Abstract
In a CMOS bandgap reference circuit, the respective collectors of two lateral parasitic NPN transistors are connected to the two nodes of a current mirror. The emitter circuit of the first parasitic NPN transistor includes a resistor, whereby the base-emitter junction current densities of the parasitic NPN transistors are maintained at a preselected ratio. A second resistor common to the emitter circuit of both parasitic NPN transistors is provided, whereby .DELTA.V.sub.BE having a positive temperature coefficient and V.sub.BE of the second parasitic NPN transistor having a negative temperature coefficient cancel one another. The temperature independent voltage across the common resistor and the base-emitter junction of the second transistor is buffered by a unity gain amplifier. The output of the unity gain amplifier is used to drive the parasitic NPN transistors and also is furnished as the reference voltage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile