The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 1992
Filed:
Jun. 13, 1990
Applicant:
Inventors:
Chuen-Der Lien, Mountain View, CA (US);
Fu-Chieh Hsu, Saratoga, CA (US);
Jeong Y Choi, Fremont, CA (US);
Jeng-Jiun Yang, Sunnyvale, CA (US);
Assignee:
Integrated Device Technology, Inc., Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 235 ; 357 237 ; 357 42 ;
Abstract
A P/N-MOS transistor having source and drain of opposite semiconductor types is provided. One embodiment of the P/N-MOS transistor has turn-off characteristic similar to a PMOS transistor, and turn-on characteristic similar to a PMOS transistor connected in series with a p-n junction diode. An application of the P/N-MOS transistor is provided in a static random access memory (SRAM) cell. This SRAM cell has density advantage over SRAM cells using polysilicon PMOS transistors as active transistors.