The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 1992
Filed:
Feb. 04, 1991
Gregor A Campbell, Glendale, CA (US);
Robert W Conn, Los Angeles, CA (US);
David C Pearson, Los Angeles, CA (US);
Alexis P deChambrier, Burbank, CA (US);
Tatsuo Shoji, Nagoya, JP;
Plasma & Materials Technologies, Inc., Burbank, CA (US);
Abstract
A high density ionized plasma is generated in a source chamber using a single loop disposed in a plane that intercepts the central axis of the source chamber perpendicularly or at a lesser angle and spaced from the closed end of the chamber. With a longitudinal magnetic field and an inert or reactive gas injected into the source chamber, excitation of the antenna with RF energy in the 5 to 30 MHz establishes the M=0 excitation mode or components of both the M=0 and M=1 modes. Low frequency whistler waves are created which generate a uniform and high density plasma and high plasma current. The plasma source thus defined is used in combination with process chamber configurations in which static shaped or time modulated magnetic fields enhance the distribution and uniformity of the plasma at a substrate to be etched, deposited or sputtered.