The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 1992
Filed:
Sep. 04, 1990
Udayanath Mitra, Tarrytown, NY (US);
Mahalingam Venkatesan, Mohegan Lake, NY (US);
North American Philips Corporation, New York, NY (US);
Abstract
A method of manufacturing a thin film transistor having a low leakage current including depositing a layer of silicon oxide on a semiconductor substrate or on a layer of silicon nitrate deposited on a glass substrate, depositing a polysilicon layer, at a temperature of 520.degree.-570.degree. C., on the silicon oxide layer, annealing this polysilicon layer in a nitrogen atmosphere at a temperature of less than 650.degree. C., forming islands in this polysilicon layer, forming a gate oxide layer on one of the islands by oxidizing the island under high pressure at a temperature below 650.degree. C., forming a gate from a heavily doped polysilicon layer deposited on the gate oxide layer, forming lightly doped source and drain areas laterally adjacent to the gate, providing a thin layer of silicon oxide on the gate and the source and drain access, heavily doping areas of the first silicon layer adjacent to the source and drain areas, annealing the source and drain areas at a temperature below 650.degree. C. and hydrogenating the resistive transistor with a hydrogen plasma.