The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 1992
Filed:
Nov. 19, 1990
Applicant:
Inventors:
Hemraj Hingarh, Saratoga, CA (US);
Andres D Asuncion, Sunnyvale, CA (US);
Michael Thomas, Cupertino, CA (US);
Robert Brown, Palo Alto, CA (US);
Assignee:
National Semiconductor Corp., Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 71 ; 357 67 ; 357 69 ;
Abstract
There is disclosed a structure for self aligned and non-self aligned power and ground buses and interconnects for integrated circuits which are thicker than normal conductors. This enables them to withstand higher current densities without adverse electromigration effects. There is also disclosed a method for making such structures.
Hingarh, Hemraj. (1992). Thick bus metallization interconnect structure to reduce bus area (U.S. Patent No. 5111276). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5111276
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile