The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 1992
Filed:
Mar. 09, 1990
Roger N Anderson, Santa Clara, CA (US);
John G Martin, Cranford, NJ (US);
Douglas Meyer, Tempe, AZ (US);
Daniel West, Sunnyvale, CA (US);
Russell Bowman, San Jose, CA (US);
David V Adams, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A thermal reactor for epitaxial deposition on a wafer comprises a double-dome vessel and dual heat sources. Each heat source comprises inner and outer circular arrays of infrared lamps. Circumferential heating uniformity is assured by the cylindrical symmetry of the vessel and the heating sources. Radial heating uniformity is provided by independent control of inner and outer heating arrays for both the top and bottom heat sources. The relative temperatures of wafer and susceptor are controlled by adjusting relative energies provided by the upper and lower heat sources so that backside migration. Reduced pressure operation is provided for by the convex top and bottom domes. Due to the provided control over transmitted energy distribution, a susceptor can have low thermal mass so that elevated temperature can be achieved more quickly and cooling can be facilitated as well. This improves throughput and reduces manufacturing costs per wafer. Reagent gas introduction can be axial or radial as desired.