The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 1992
Filed:
Mar. 05, 1991
Joseph R Monkowski, Danville, CA (US);
Mark A Logan, Leucadia, CA (US);
Lloyd F Wright, Carlsbad, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A glass deposition viscoelastic flow process for forming planar and semi-planar insulator structures on semiconductor devices, which comprises feeding vaporized reactants into a reaction chamber at a reaction temperature between 750.degree.-950.degree. C. and subjecting the surface of the semiconductor devices to a high reactant velocity. The high reactant velocity allows the formation of a high quality, uniform glass layer at temperatures compatible with the fusion temperature, so that deposition occurs simultaneously with the viscoelastic flow of the glass. The simultaneous deposition and flow provides for topographical planarization substantially free of voids and other layer inconsistencies.