The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 1992
Filed:
Jan. 07, 1991
Applicant:
Inventors:
Akitoshi Yokota, Nara, JP;
Yukihiko Nakata, Nara, JP;
Hitoshi Sannomiya, Osaka, JP;
Sota Moriuchi, Nara, JP;
Yasumi Inoue, Osaka, JP;
Manabu Itoh, Nara, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
136249 ; 136255 ; 136258 ; 357 30 ;
Abstract
An amorphous semiconductor solar cell includes an i type layer which is an at least partially alloyed, substantially intrinsic semiconductor, an n type layer formed on one side of the i type layer, and a p type layer formed n the other side of the i type layer, and the i type layer has its energy bandgap varied in a thickness direction to have a bandgap larger than the bandgap of the p type layer in the vicinity of the interface with the p type layer.