The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 1992
Filed:
Nov. 16, 1989
Hiroyuki Kuriyama, Osaka, JP;
Kaneo Watanabe, Gifu, JP;
Shigeru Noguchi, Osaka, JP;
Hiroshi Iwata, Osaka, JP;
Keiichi Sano, Osaka, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
An image sensor includes a photodiode array having a number of photodiodes arranged in a linear line. Each of the photodiodes is connected to each of analog switches which are sequentially turned-on by a drive pulse. Each analog switch includes a parallel connection of a P-channel MOS-FET and an N-channel MOS-FET having the same gate capacitance. The drive pulse is applied to a gate of the P-channel MOS-FET through one inverter and to a gate of the N-channel MOS-FET through two inverters being connected in a cascade fashion. A delay time of the one inverter and a total delay time of the two inverters are set to be equal to each other, and therefore, the two MOS-FETs are simultaneously turned-on or -off in response to the same drive pulse. A dummy switch composed of a complementary MOS-FET circuit which acts in a completely reversed phase with respect to the analog switch is provided, and a switching noise occurring in the analog switch and a switching noise occurring in the dummy switch are canceled with each other at an output terminal.