The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 1992

Filed:

Jun. 19, 1989
Applicant:
Inventors:

Yuichi Saito, Urawa, JP;

Shinsuke Sakai, Noda, JP;

Hisao Hayashi, Atsugi, JP;

Takeshi Matsushita, Sagamihara, JP;

Assignees:

Japan Silicon Co., Ltd., both of, JP;

Sony Corporation, both of, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437225 ; 437228 ; 156636 ; 156645 ; 156662 ; 148D / ; 5128 / ; 5128 / ;
Abstract

The present invention relates to a method for polishing a silicon wafer. The method comprises the steps of: (a) supplying a polishing fluid to a polishing surface, the polishing fluid including an alkaline fluid and polishing particles of high-purity silica dispersed in the alkaline fluid, the polishing surface being planar; (b) bringing a silicon wafer in contact with the polishing surface; and (c) moving at least one of the silicon wafer and the polishing surface relative to the other, thereby polishing the silicon wafer. The method is characterized by the following: the polishing surface is made of a ceramic material harder than the silicon wafer and more resistant to mechanochemical polishing than silicon, and the maximum roughness of the ceramic is less than 0.02 .mu.m.


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