The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 1992
Filed:
Apr. 13, 1990
Applicant:
Inventor:
Rod C Langley, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B / ;
U.S. Cl.
CPC ...
428131 ; 428209 ; 428446 ; 428901 ;
Abstract
A self-aligned, sloped contact, through BPSG and thick TEOS (at least 200 nm but preferably 300-500 nm or more). Sloping is achieved through exploitation of BPSG and TEOS etch characteristics, to independently form concave and convex sidewalls, respectively. Self-alignment is obtained through thick conformal TEOS, along a sidewall of an underlying structure such as a transistor gate, directing contact formation away from the structure. TEOS etch is timed, allowing simultaneous formation of contacts to substrate and gates without overetching gates.