The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 1992
Filed:
Jul. 25, 1989
Atsushi Hiraiwa, Kodaira, JP;
Shinichiro Kimura, Hachioji, JP;
Toshiyuki Mine, Hamuramachi, JP;
Takashi Kobayashi, Kokubunji, JP;
Tokuo Kure, Nishitama, JP;
Shinpei Iijima, Akishima, JP;
Jiro Yugami, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Disclosed is a semiconductor device including a charge storage capacitor having a storage electrode which is electrically connected to a switching transistor through a contact hole provided in an insulator and which has a greater film thickness than the radius of the contact hole, at least a part of the storage electrode being disposed above a data line. It is possible to reduce the memory cell area while preventing lowering in the capacitance, and thus realize high density and high integration of semiconductor devices.