The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 1992
Filed:
Apr. 20, 1990
Applicant:
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156657 ; 156662 ; 156345 ;
Abstract
A plasma etching method including the steps of mounting an object to be processed in a region formed between one electrode and an other electrode, introducing an etching gas into the region, setting an area of the contact surface of the other electrode, which is in contact with the etching gas, to a predetermined value in accordance with a predetermined selection ratio used in etching the object, generating plasma of the etching gas by applying a predetermined electric power between the electrodes after setting the area of the contact surface of the other electrode, which is in contact with the etching gas, to the predetermined value, and etching the object by the plasma.