The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 1992
Filed:
Mar. 20, 1991
Applicant:
Inventors:
Tamihiro Ishimura, Tokyo, JP;
Masahumi Miyawaki, Tokyo, JP;
Sanpei Miyamoto, Tokyo, JP;
Hidenori Uehara, Tokyo, JP;
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; G11C / ;
U.S. Cl.
CPC ...
357 42 ; 357 44 ; 357 45 ; 36518905 ; 36518906 ; 36518909 ; 365190 ;
Abstract
A CMOS memory device has a memory cell array, formed on a substrate of a first conductive type, for storing data. The data are input and output via bit line pairs connected to the memory cell array. Sense amplifiers of the first conductive type, which are embedded in wells of a second conductive type, amplify potential differences on the bit line pairs. The sense amplifiers are connected to and driven by a sense amplifier drive signal line. The sense amplifier drive signal line also biases the wells containing the sense amplifiers, thereby preventing latch-up.