The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 1992
Filed:
Apr. 26, 1989
Hiroshi Kamio, Tokyo, JP;
Kenji Araki, Yokohama, JP;
Yoshinobu Shima, Yokohama, JP;
Makoto Suzuki, Kawasaki, JP;
Akira Kazama, Kawasaki, JP;
Shigetake Horie, Tokyo, JP;
Yasumitsu Nakahama, Yokohama, JP;
NKK Corporation, Tokyo, JP;
Abstract
The present invention relates to a method and apparatus for manufacturing silicon single crystals by the Czochralski method, including the steps of dividing a crucible containing molten silicon into an inner single crystal growing section and an outer material feeding section to allow said molten silicon to move slowly, and pulling a silicon single crystal from said single crystal growing section while continuously feeding silicon starting material to said material feeding section, the improvement wherein temperatures of said material feeding section and said molten silicon are maintained higher than a melting point of silicon by at least more than 12.degree. C.