The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 1992
Filed:
Apr. 24, 1989
Applicant:
Inventor:
Andrew B Wittkower, Rockport, MA (US);
Assignee:
IBIS Technology Corporation, Danvers, MA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148 33 ; 437 24 ; 437 26 ; 437 62 ; 148D / ;
Abstract
An ion implantation process for producing a buried insulating layer of silicon dioxide in a silicon substrate which takes advantage of the effects of surface erosion and sputtering inherent to the ion implantation process. The process allows the production of an insulating layer buried within a silicon semiconductor wherein the width of the insulating layer can be contoured by controlling the beam energy during implantation.