The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 1992
Filed:
Dec. 18, 1990
Gottfried Schuh, Augsburg, DE;
Hans-Joachim Schulze, Ottobrunn, DE;
Eupec Europaeische Gesellsch. F. Liestungshalbleiter mbH+Co. KG, Warstein-Belecke, DE;
Abstract
Short circuits on the anode side of thyristors can be manufactured easily d inexpensively if a p-doped layer is first generated on the anode side. On it, after an oxide masking and structuring process, grooves (7) are produced, which extend into the base zone (1) of the thyristor on the anode side, in which the short-circuit areas are then generated. After the oxide has been removed, the anode electrode is applied, which contacts the p-doped layer and the short-circuit areas. As an alternative, the short-circuit areas may also be generated first through the openings of a structured oxide. Then, after removal of the oxide, the entire surface is p-doped, with the doping being less than that of the short-circuit areas. Then the anode electrode is applied.