The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 1991
Filed:
Jun. 08, 1989
Applicant:
Inventors:
Assignee:
Mitsubishi Metal Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
505-1 ; 75234 ; 20419224 ; 20429813 ; 419 19 ; 505731 ;
Abstract
A target used for forming a thin film of a quinary superconductive oxide contains metal copper ranging between about 8% and about 40% by volume dispersed into a quaternary or a quinary complex oxide, and the metal copper improves the thermal conductivity and the electrical conductivity of the target, so that cracks are less liable to take place in the target and the target is applicable to a d.c. sputtering system, thereby decreasing the production cost of the thin film.
Sugihara, Tadashi. (1991). Sputtering target used for forming quinary superconductive oxide (U.S. Patent No. 5077269). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5077269
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile