The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 1991
Filed:
Jul. 07, 1989
Akihiro Washitani, Itami, JP;
Masashi Ohmori, Itami, JP;
Kouichirou Tsutahara, Itami, JP;
Toru Yamaguchi, Itami, JP;
Abstract
An atmospheric CVD apparatus includes a gas head for ejecting reaction gases consisting of SiH.sub.4 gas and O.sub.2 gas, and a stage which is arranged at a position above the gas head and which is rotated while a semiconductor wafer retained on the bottom of the stage is heated to a temperature in the range of 380.degree. C. to 440.degree. C., the distance between the surface of the semiconductor wafer and the gas supply head being set in the range of 8 mm to 25 mm. The flow ratio between the reaction gases is so adjusted that when the flow rate of the O.sub.2 gas is represented as 1.0, that of the SiH.sub.4 gas is represented as 0.07 to 0.10. The apparatus deposits a reaction product film which excels in film thickness uniformity with a satisfactory level of reproducibility. Furthermore, the apparatus involves very little generation of foreign matter, including reaction products in the form of particles sticking to the surface of the semiconductor wafer, thereby making it possible to produce high-quality semiconductor devices.