The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1991
Filed:
Sep. 08, 1989
Applicant:
Inventors:
Joaquim Torres, Saint Martin le Vinoux, FR;
Jean Palleau, Uriage, FR;
Noureddine Bourhila, Echirolles, FR;
Assignee:
L'Etat Francais, Moulineaux, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437200 ; 437192 ; 437198 ; 437 41 ; 148D / ; 148D / ;
Abstract
A process for forming tungsten or molybdenum silicide on silicon apparent regions (6) of a silicon wafer surface (1) also comprising oxidized regions (2) includes the steps consisting in uniformly coating the wafer with a tungsten or molybdenum layer (10) and annealing at a temperature ranging from 700.degree. C. to 1000.degree. C. The annealing step is carried out in presence of a low pressure gas forming a chemical composite with tungsten or molybdenum. The composite is then selectively etched.