The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 1991

Filed:

Sep. 28, 1990
Applicant:
Inventors:

Tamotsu Satoh, Atsugi, JP;

Takao Yonehara, Atsugi, JP;

Yoshio Nakamura, Atsugi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 52 ; 437 90 ; 437915 ;
Abstract

A semiconductor memory device is provided with memory cells each having a capacitor for accumulating an electric charge and a transistor for charging and discharging the capacitor. The memory device comprises a substrate, an insulator layer formed thereon and a monocrystalline semiconductor layer formed thereon. The capacitor is composed of said monocrystalline semiconductor layer, the insulator layer and the substrate while the transistor is formed in the monocrystalline semiconductor layer.


Find Patent Forward Citations

Satoh, Tamotsu. (1991). Process for producing a semiconductor memory device (U.S. Patent No. 5070034). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5070034

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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