The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 1991
Filed:
Jan. 03, 1991
Takayuki Ohba, Yokohama, JP;
Shinji Miyagaki, Tokyo, JP;
Tatsushi Hara, Inagi, JP;
Kenji Morishita, Yokohama, JP;
Seiichi Suzuki, Kawasaki, JP;
Seigen Ri, Yokohama, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
In the course of a production of a semiconductor device with a multilayer insulating layer, when a contact hole is opened in the multilayer insulating layer, an insulating layer activating a metal selective vapor-growth appears at the side wall of the contact hole. A thin metal (e.g., tungsten) layer is selectively deposited in the contact hole. In another case, another metal layer appears within the contact hole. An insulating film preventing a metal selective vapor-growth is deposited over the whole surface of the side wall of the contact hole, the metal layer and a top surface of the multilayer insulating layer, and is anisotropically etched to leave a portion of the film lying on the side wall only as a side wall insulating film. The contact hole is completely filled with another metal (tungsten) by a selective vapor-growth method, to flatten an exposed surface, and then a conductor (e.g., aluminum) line layer is formed on the metal layer in the contact hole and the multilayer insulating layer, to thereby complete the wiring structure of the semiconductor device.