The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 1991

Filed:

Aug. 31, 1990
Applicant:
Inventors:

Bertrand F Cambou, Mesa, AZ (US);

H Ming Liaw, Scottsdale, AZ (US);

Mamoru Tomozane, Scottsdale, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437132 ; 437234 ;
Abstract

Silicon and non-silicon semiconductor devices are fabricated on a single chip by bonding a silicon wafer to a non-silicon semiconductor substate. Portions of the non-silicon semiconductor substrate are selectively etched to expose the silicon wafer. Semiconductor devices may then be formed in the silicon wafer and on the non-silicon semiconductor substrate. Alternatively, selective epitaxial silicon may be grown where the non-silicon semiconductor substrate was removed. In another embodiment, a non-silicon semiconductor substrate having wells formed therein is bonded to a silicon wafer. The non-silicon semiconductor substrate is then polished until openings are provided to the silicon wafer. Further processing is carried out as described above.


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