The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 1991
Filed:
Mar. 27, 1990
Applicant:
Inventor:
John H Hall, San Jose, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 42 ; 357 15 ; 357 43 ; 357 44 ; 357 86 ;
Abstract
This is an invention for a complementary transistor pair which includes an n-channel double-diffused-metal-oxide-semiconductor transistor having a source, a drain and an insulated gate. A Schottky barrier junction diode is formed to the drain of the n-channel transistor. The transistor pair also includes a p-channel double-diffused-metal-oxide-semiconductor transistor which also has a source, a drain and an insulated gate. A second Schottky barrier junction diode is formed to the drain of the p-channel transistor. The two Schottky diodes are electrically coupled to one another.