The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 1991
Filed:
May. 18, 1990
Fujitsu Ltd., Kanagawa, JP;
Abstract
Plasma ashing methods, for moving a resist material formed on a ground layer of a semiconductor device during fabrication of said semiconductor, are performed by using one of three kinds of reactant gases each composed of three different gases. Plasma ashing is performed: at an ashing rate of 0.5 .mu.m/min at 160.degree. C. and with an activation energy of 0.4 eV when a reactant gas composed of oxygen, water vapor and nitrogen is used; at an ashing rate of 0.5 .mu.m/min at 140.degree. C., with an activation energy of 0.38 eV and without etching the ground layer when a reactant gas composed of oxygen, water vapor and tetrafluoromethane is used; and at an ashing rate of 0.5 .mu.m/min at 140.degree. C., with an activation energy of 0.4 eV when a reactant gas composed of oxygen, hydrogen and nitrogen is used.