The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 1991

Filed:

Jul. 27, 1988
Applicant:
Inventors:

George R Canepa, Folsom, CA (US);

Mark A Holler, Palo Alto, CA (US);

Simon M Tam, San Mateo, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H03K / ;
U.S. Cl.
CPC ...
357 235 ; 357 40 ; 357 41 ; 357 42 ; 357 45 ; 307201 ; 365185 ;
Abstract

A cell employing floating gate storage device particularly suited for neural networks. The floating gate from the floating gate device extends to and becomes part of a second, field effect device. Current through the second device is affected by the charge on the floating gate. The weighting factor for the cell is determined by the amount of charge on the floating gate. By charging the floating gate to various levels, a continuum of weighting factors is obtained. Multiplication is obtained since the current through the second device is a function of the weighting factor.


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Canepa, George. (1991). Semiconductor cell for neural network and the like (U.S. Patent No. 5055897). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5055897

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