The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 1991
Filed:
Aug. 08, 1989
Satoshi Haraichi, Yokohama, JP;
Fumikazu Itoh, Fujisawa, JP;
Akira Shimase, Yokohama, JP;
Takahiko Takahashi, Iruma, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In locally reactive etching by irradiating to a multilayered workpiece reactive beam generated by extracting the reactant gas ionized or by irradiating such focussing beam as ion beam, electron beam or laser beam to the multilayered workpiece in an atmosphere of reactant gas; each layer of a multilayered device comprising a plurality of layers formed on a substrate can be accurately and quickly eteched by detecting the change of the material of the layer currently being etched and after detecting the change of material, switching reactant gas to be ionized or atmospheric reactant gas to one complying with the material of the layer currently being etched. This multilayered device micro etching method can be readily put into practice by a multilayered device micro etching system further comprising means for detecting the change of the material of layer to be etched and means for switching and supplying a plurality of reactant gases, in a micro etching appratus for performing locally rective etching.