The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 1991
Filed:
Nov. 01, 1990
Akishige Murakami, Shibata, JP;
Hiroshi Miura, Natori, JP;
Kouichi Haga, Shibata, JP;
Kenji Yamamoto, Watari, JP;
Masafumi Kumano, Sendai, JP;
Ricoh Company, Ltd., Tokyo, JP;
Ricoh Research Institute of General Electronics Co., Ltd., Natori, JP;
Abstract
An amorphous silicon photosensor is disclosed, which comprises a photoconductive layer which comprises three or four amorphous silicon layers formed on a substrate, each layer containing at least one kind of atom selected from the group consisting of hydrogen, heavy hydrogen, and halogen atoms, and having two heterojunctions, in which the optical band gap of an amorphous silicon layer lying between the two heterojunctions is in the range of 1.6 to 1.8 eV, a first end amorphous silicon layer, to which light is applied, contains oxygen, has an optical band gap of 1.9 eV or more, and at least part of the layer indicates an i-type or p-type conductivity, and a second end amorphous silicon layer, to which light is not applied, contains oxygen, having an optical band gap of 1.9 eV or more, and at least part of the layer indicates an i-type or n-type conductivity.