The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 1991
Filed:
Dec. 28, 1990
Tsutomu Ikeda, Atsugi, JP;
Yutaka Watanabe, Atsugi, JP;
Masayuki Suzuki, Atsugi, JP;
Masami Hayashida, Atsugi, JP;
Yasuaki Fukuda, Hadano, JP;
Shigetaro Ogura, Tama, JP;
Takashi Iizuka, Atsugi, JP;
Masahito Niibe, Atsugi, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A reflection type mask usable to print a pattern upon a semiconductor wafer by use of soft X-rays or otherwise is disclosed. A reflective surface is formed by a multilayered film which is formed on a substrate by layering different materials having different refractive indices in consideration of Bragg diffraction and Fresnel reflection. A non-reflective portion is formed on the reflecting surface to provide a desired pattern. Alternatively, a pattern comprising a multilayered structure may be formed upon a non-reflective substrate. The mask of the present invention assures pattern printing of high contrast.