The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 1991
Filed:
Dec. 14, 1989
Genshu Fuse, Hirakata, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor memory, particularly, a dynamic RAM, is provided having a two-cell one-contact memory cell connection structure. A connection portion between memory cells in a silicon substrate of a dynamic RAM, wherein each memory cell has one silicon island enclosed by a trench and provided with two transistor cells within said island, is formed by connecting a polysilicon electrode, enclosing the periphery of the silicon island at the inside of the trench and separated at two portions of the periphery of the silicon island, to the source or drain of one of the two transistor cells of the memory cell. The connection of the polysilicon electrode to the source or drain of the transistor cell of each of two adjacent memory cells can be easily achieved through self aligning by using a fine-trench polysilicon burying method or a selective epitaxial method.