The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 1991
Filed:
Sep. 17, 1990
Martin J Alter, Los Altos, CA (US);
Micrel Semiconductor, Sunnyvale, CA (US);
Abstract
A polysilicon or equivalent plate, to be used as an upper plate of the capacitor, is first formed over an oxide layer grown on a substrate. The length of the upper plate is made shorter than gate lengths of MOS transistors formed with the same process so that, after dopants are deposited into exposed regions of the substrate on both sides of the plate in a manner identical to forming self-aligned source and drain regions of an MOS transistor, the dopants will side-diffuse during drive-in and the diffused regions will be closely separated or merged under the plate. The resulting capacitor structure has a more stable capacitance with varying V.sub.GS levels than MOS transistors merely connected and used as capacitors and has a lower series resistance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile