The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 1991
Filed:
Dec. 10, 1990
John L Leicht, Hawthorn Woods, IL (US);
Hugh R Malone, Phoenix, AZ (US);
Douglas J Mathews, Mesa, AZ (US);
James E Mitzlaff, Arlington Heights, IL (US);
Scott D Munier, Arlington Heights, IL (US);
Michele G Oehlerking, Riverside, IL (US);
Vernon R Scott, Scottsdale, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A non-hermetic, three-dimensional, microwave semiconductor device carrier with integral waveguide couplers is disclosed. A molded plastic substrate having a suitable dielectric constant and varying thicknesses comprises plated conductors and locations for receiving GaAs MMIC's. MMIC's are mounted to a metal backplate and die bonded to the plated conductors. The waveguide couplers are integrally molded as part of the carrier substrate, and comprise plated through cylindrical members. Signals from a waveguide cavity are coupled to the MMIC's by inserting the waveguide couplers into a waveguide port. The carrier and integral waveguide coupler together with a plated molded cover forms a non-hermetic package providing pseudo-shielding cavities about the resident multiple semiconductor GaAs die. Transmission line impedance control is enhanced varying the substrate thickness on a per conductor basis. Frequency of operation exceeds 12 gigahertz.