The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 1991
Filed:
Aug. 25, 1988
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A MOS bulk device having source/drain-contact regions 36 which are almost completely isolated by a dielectric 35. These 'source/drain' regions 36 formed by using a silicon etch to form a recess, limiting the etched recess with oxide, and backfilling with polysilicon. A short isotropic oxide etch, followed by a polysilicon filament deposition, then makes contact between the oxide-isolated source/drain-contact regions 36 and the channel region 33 of the active device. Outdiffusion through the small area of this contact will form small diffusioins 44 in silicon, which act as the electrically effective source/drain regions. Use of sidewall nitride filaments 30 on the gate permits the silicon etch step to be self-aligned.