The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 1991
Filed:
Oct. 12, 1989
Terukaza Ohno, Kanagawa, JP;
Katsutoshi Izumi, Kanagawa, JP;
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Abstract
A power semiconductor device includes a layered first insulating region (101) formed on a first major surface of a semiconductor layer (58), a first conductive layer (104, 105, 106, 107, 108, 109) formed on the first insulating region and having the same conductivity type as that of the semiconductor layer, a layered second insulating region (100) formed on the first conductive layer, a vertical power transistor (A) having the semiconductor layer as one of its components and formed on the first major surface of the semiconductor layer, a third insulating region (102) for dielectrically isolating the first conductive layer from the other conductive layer, and a control MIS transistor (B, C), formed on the second insulating region, for controlling the vertical power transistor. A predetermined bias is applied on the first conductive layer to prevent formation of a back channel of the control MIS transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile