The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 1991
Filed:
Nov. 21, 1989
Tadamoto Tamai, Tokyo, JP;
Junichi Murakami, Ehime, JP;
Sumitomo Eaton Nova Corporation, Tokyo, JP;
Abstract
In an ion implantation apparatus for injecting an ion beam into a substrate at a controllable incident angle, the substrate (13a) is supported by a supporting section which comprises a disc shaped plate (13) for locating the substrate thereon and an injecting chamber (11) for disposing the disc shaped plate therein. The substrate is irradiated by the ion beam. The ion implantation apparatus comprises a first controlling section (20, 23) and a second controlling section (34). The first controlling section controls the supporting section so as to change a location of the substrate in relation to the ion beam. The second controlling section controls supporting section so as to change the controllable incident angle relative to the ion beam.