The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 1991
Filed:
Jun. 08, 1990
Tom S Wei, Campbell, CA (US);
Elisabeth Ekman, Campbell, CA (US);
Andre Walker, Campbell, CA (US);
Stephen Clark, Campbell, CA (US);
Zilog, Inc., Campbell, CA (US);
Abstract
A CMOS N-channel, open-drain, pull-down buffer circuit is capable of pulling down voltages on an external pad in excess of the breakdown voltage of the individual N-channel field effect transistors in the buffer circuit. The circuit may be fabricated as part of a CMOS interated circuit in an industrial standard 1.5 microns CMOS process. The higher voltage acceptance is effected by using two open-drain N-transistors in series such that the external voltage is divided among the two transistors. A parallel high voltage circuit to the external pad can be independently optimized to provide a lower impedance path and a higher endurance for electrostatic discharge. While the two-transistor voltage divider exposes one of the transistor' gate to ESD via another external terminal, enhanced ESD protection is effected by having a resistor in series between the gate and the external terminal.