The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 1991
Filed:
Jan. 22, 1990
Armand P Neukermans, Palo Alto, CA (US);
Josef Berger, Los Altos, CA (US);
Tencor Instruments, Mountain View, CA (US);
Abstract
A method for fabricating a microtip, cantilevered from a base and having a controllably high aspect ratio, for use in microprobe microscopy to probe variations in materials at the atomic level. A two-layer semiconductor material structure is provided, one layer being n type and the other layer being p type. A thin pencil of ions of n type is implanted through the n type layer into the p type layer, through a small aperture in a mask layer that overlies the n type layer. The p type material is then etched away, leaving the n type ion profile and the n type layer as a cantilevered microtip. The n type semiconductor layer may be replaced by a layer of any material that resists etching by the selected etchant.