The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 1991
Filed:
Jan. 31, 1989
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 34 ; 357 43 ; 357 46 ;
Abstract
A complementary semiconductor device is disclosed having a substrate and a four layer structure of pnpn provided on the substrate wherein the first three layers constitute a pnp-type bipolar transistor and the second to the fourth layer constitute an npn-type bipolar transistor. According to the present invention, the pnp- and npn-type transistor which are disposed on different portions of a principal surface of the substrate, respectively, can be produced concurrently by crystal growth and thus production steps are simple and yield is remarkably improved.