The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 1991

Filed:

Jan. 12, 1989
Applicant:
Inventors:

Jin Onuki, Hitachi, JP;

Yasushi Koubuchi, Hitachi, JP;

Shinichi Fukada, Hitachi, JP;

Katuhiko Shiota, Ibaraki, JP;

Kunio Miyazaki, Hitachi, JP;

Tatsuo Itagaki, Tokyo, JP;

Genji Taki, Hitachi, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 70 ; 357 65 ; 357 67 ; 357 71 ; 357 72 ; 428620 ; 428632 ; 428634 ;
Abstract

A semiconductor device and the method of fabricating the semiconductor device include a semiconductor substrate and a plurality of conductor films formed on the substrate. Each of the conductor films is made of aluminum alloy including at least one element selected from palladium and platinum and, more preferably, further including at least one element selected from lithium, beryllium, magnesium, manganese, iron, cobalt, nickel, copper, lanthanum, cerium, chromium hafnium, zirconium, cadmium, titanium, tungsten, vanadium, tantalum, and niobium, with a protective film which includes oxide of the selected one of palladium and platinum being formed on the side wall of the conductor film.


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