The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 1991
Filed:
Nov. 22, 1989
Yoshihiro Suzuki, Tsukuba, JP;
Hiroyoshi Yajima, Tsukuba, JP;
Junichi Shimada, Tsukuba, JP;
Kenji Shimoyama, Ushiku, JP;
Hideki Gotoh, Ushiku, JP;
Director-General, Agency of Industrial Science and Technology, Tokyo, JP;
Mitsubishi Kasei Corporation, Tokyo, JP;
Abstract
Disclosed is a divided electrode type semiconductor layer device designed to improve the separation of electrodes without reducing the amount of doping for carrier injection layers. A double-hetero-structure is formed on a semi-insulating substrate, and at least two pairs of carrier injection clad layers are thereafter buried like lands while a high-resistance portion is left between the carrier injection clad layers to electrically separate these layers. The electrodes are respectively formed on the separated carrier injection layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile