The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 1991
Filed:
Jun. 10, 1988
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 236 ; 357 51 ;
Abstract
A semiconductor memory is provided having a capacitor formed by utilizing a groove formed in a semiconductor substrate and an insulated gate field effect transistor. In particular, an arrangement is provided to prevent a depletion region formed around the groove from growing into an adjacent capacitor. By virtue of this, both the area occupied by each memory cell and the distance between the memory cells can be made very small. Accordingly, high density integration is facilitated.